IPB45N06S4L08ATMA3
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 45A TO263-3
$1.92
Available to order
Reference Price (USD)
1+
$1.92000
500+
$1.9008
1000+
$1.8816
1500+
$1.8624
2000+
$1.8432
2500+
$1.824
Exquisite packaging
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Meet the IPB45N06S4L08ATMA3 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPB45N06S4L08ATMA3 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.9mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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