IPB60R090CFD7ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 25A TO263-3-2
$7.46
Available to order
Reference Price (USD)
1+
$7.46000
500+
$7.3854
1000+
$7.3108
1500+
$7.2362
2000+
$7.1616
2500+
$7.087
Exquisite packaging
Discount
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Meet the IPB60R090CFD7ATMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPB60R090CFD7ATMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 570µA
- Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 124W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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