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TK17V65W,LQ

Toshiba Semiconductor and Storage
TK17V65W,LQ Preview
Toshiba Semiconductor and Storage
X35 PB-F POWER MOSFET TRANSISTOR
$3.26
Available to order
Reference Price (USD)
1+
$3.26000
500+
$3.2274
1000+
$3.1948
1500+
$3.1622
2000+
$3.1296
2500+
$3.097
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 8.7A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 900µA
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-DFN-EP (8x8)
  • Package / Case: 4-VSFN Exposed Pad

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