SCT3030KLGC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 72A TO247N
$84.94
Available to order
Reference Price (USD)
1+
$64.35000
10+
$61.13400
30+
$59.52567
120+
$56.30800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the SCT3030KLGC11 by Rohm Semiconductor, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the SCT3030KLGC11 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
- Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 2222 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 339W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IPI80N06S4L07AKSA2
onsemi
NTLJS2103PTBG
Alpha & Omega Semiconductor Inc.
AOH3254
Infineon Technologies
BTS114AE3045A
Alpha & Omega Semiconductor Inc.
AON6452
Vishay Siliconix
SQD50N06-09L_GE3
onsemi
FDMC8622
onsemi
NTD60N03
Nexperia USA Inc.
BSP122,115
Nexperia USA Inc.