IPB720P15LMATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO263-3
$6.53
Available to order
Reference Price (USD)
1+
$6.53000
500+
$6.4647
1000+
$6.3994
1500+
$6.3341
2000+
$6.2688
2500+
$6.2035
Exquisite packaging
Discount
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Meet the IPB720P15LMATMA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPB720P15LMATMA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 72mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id: 2V @ 5.55mA
- Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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