SI8429DB-T1-E1
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 8V 11.7A 4MICROFOOT
$1.09
Available to order
Reference Price (USD)
3,000+
$0.46200
6,000+
$0.43890
15,000+
$0.42240
Exquisite packaging
Discount
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Meet the SI8429DB-T1-E1 by Vishay Siliconix, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SI8429DB-T1-E1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Vishay Siliconix.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 11.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 2.77W (Ta), 6.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA, CSPBGA
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