Shopping cart

Subtotal: $0.00

IPB80P04P407ATMA2

Infineon Technologies
IPB80P04P407ATMA2 Preview
Infineon Technologies
MOSFET_(20V 40V) PG-TO263-3
$2.07
Available to order
Reference Price (USD)
1+
$2.07000
500+
$2.0493
1000+
$2.0286
1500+
$2.0079
2000+
$1.9872
2500+
$1.9665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Diodes Incorporated

DMP34M4SPS-13

Diodes Incorporated

DMTH6004LPS-13

Infineon Technologies

BSS139IXTSA1

Diodes Incorporated

DMTH4005SPSQ-13

Rohm Semiconductor

R6576ENZ4C13

Infineon Technologies

IPP65R190CFD7XKSA1

Top