R6576ENZ4C13
Rohm Semiconductor
Rohm Semiconductor
650V 76A TO-247, LOW-NOISE POWER
$20.39
Available to order
Reference Price (USD)
1+
$20.39000
500+
$20.1861
1000+
$19.9822
1500+
$19.7783
2000+
$19.5744
2500+
$19.3705
Exquisite packaging
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Discover the R6576ENZ4C13 from Rohm Semiconductor, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the R6576ENZ4C13 ensures reliable performance in demanding environments. Upgrade your circuit designs with Rohm Semiconductor's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 46mOhm @ 44.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2.96mA
- Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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