IPB80P04P4L04ATMA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 40V 80A TO263-3
$2.17
Available to order
Reference Price (USD)
1,000+
$1.02495
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IPB80P04P4L04ATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPB80P04P4L04ATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Nexperia USA Inc.
BUK9Y25-80E,115
Infineon Technologies
IPI80N06S207AKSA2
STMicroelectronics
STF12NK80Z
IXYS
IXTH80N20L
Fairchild Semiconductor
FDB8876
Fairchild Semiconductor
FDS6688
onsemi
FDBL0630N150
Infineon Technologies
IAUA250N04S6N006AUMA1
onsemi
NVD4806NT4G-VF01
Infineon Technologies