IPBE65R145CFD7AATMA1
Infineon Technologies
Infineon Technologies
AUTOMOTIVE PG-TO263-7
$4.73
Available to order
Reference Price (USD)
1+
$4.73320
500+
$4.685868
1000+
$4.638536
1500+
$4.591204
2000+
$4.543872
2500+
$4.49654
Exquisite packaging
Discount
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The IPBE65R145CFD7AATMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPBE65R145CFD7AATMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 145mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 420µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1694 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 98W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-11
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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