IPC60R280E6X1SA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH BARE DIE
$0.00
Available to order
Reference Price (USD)
11,124+
$1.35800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPC60R280E6X1SA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPC60R280E6X1SA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
STMicroelectronics
STL200N45LF7
Infineon Technologies
IRFC4468D
Infineon Technologies
AUXEC0368STRL
STMicroelectronics
STD19NF06L
IXYS
IXFH1837
STMicroelectronics
STF21P6LLF6
Nexperia USA Inc.
BUK7K134-100E115
Renesas Electronics America Inc
RQJ0603LGDQAWS#H6
Nexperia USA Inc.
PHM6230DLSX
Nexperia USA Inc.