RQJ0603LGDQAWS#H6
Renesas Electronics America Inc
Renesas Electronics America Inc
P CH MOS FET POWER SWITCHING
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RQJ0603LGDQAWS#H6 single MOSFET from Renesas Electronics America Inc is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the RQJ0603LGDQAWS#H6 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Nexperia USA Inc.
PHM6230DLSX
Nexperia USA Inc.
PH4030DLVX
Rohm Semiconductor
R6024KNZ4C13
Toshiba Semiconductor and Storage
TPCA8103(TE12L,Q,M
Infineon Technologies
SIPC18N50C3X1SA1
Infineon Technologies
IPD060N03LGINCT
onsemi
FDD9509L
Microsemi Corporation
JANTXV2N6770T1
onsemi
FDMC86106LZ-L701
Harris Corporation