IPD11DP10NMATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TO252-3
$2.01
Available to order
Reference Price (USD)
1+
$2.01000
500+
$1.9899
1000+
$1.9698
1500+
$1.9497
2000+
$1.9296
2500+
$1.9095
Exquisite packaging
Discount
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The IPD11DP10NMATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IPD11DP10NMATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 111mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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