IPD220N06L3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 30A TO252-3
$0.96
Available to order
Reference Price (USD)
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$0.96000
500+
$0.9504
1000+
$0.9408
1500+
$0.9312
2000+
$0.9216
2500+
$0.912
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The IPD220N06L3GATMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 36W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-311
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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