IPD60R210PFD7SAUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 16A TO252-3
$2.39
Available to order
Reference Price (USD)
1+
$2.39000
500+
$2.3661
1000+
$2.3422
1500+
$2.3183
2000+
$2.2944
2500+
$2.2705
Exquisite packaging
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The IPD60R210PFD7SAUMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPD60R210PFD7SAUMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 64W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-344
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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