IPD65R950CFDATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 3.9A TO252-3
$0.87
Available to order
Reference Price (USD)
2,500+
$0.52483
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IPD65R950CFDATMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPD65R950CFDATMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 14.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 36.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Toshiba Semiconductor and Storage
SSM6J808R,LXHF
Infineon Technologies
IPP039N10N5AKSA1
Vishay Siliconix
IRFIB5N65APBF
Fairchild Semiconductor
FDS4070N3
IXYS
IXTP6N50D2
Rohm Semiconductor
RCJ120N25TL
Panjit International Inc.
PJD70P03_L2_00001
STMicroelectronics
STD20NF20
Rohm Semiconductor
RRL025P03TR
Rohm Semiconductor