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IXTP6N50D2

IXYS
IXTP6N50D2 Preview
IXYS
MOSFET N-CH 500V 6A TO220AB
$7.80
Available to order
Reference Price (USD)
1+
$5.99000
50+
$4.81500
100+
$4.38700
500+
$3.55240
1,000+
$2.99600
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 3A, 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

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