IPI08CN10N G
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 95A TO262-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPI08CN10N G from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's IPI08CN10N G for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8.5mOhm @ 95A, 10V
- Vgs(th) (Max) @ Id: 4V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Related Products
IXYS
IXTH21N50
Infineon Technologies
64-8016
Renesas Electronics America Inc
RJK0301DPB-WS#J0
Microsemi Corporation
JANTX2N6804
Infineon Technologies
IRLR7833TR
Infineon Technologies
BSP89L6327HTSA1
Vishay Siliconix
SIE806DF-T1-GE3
Rohm Semiconductor
RQ3E150MNTB1
Infineon Technologies
IPD05N03LA G
Infineon Technologies