IPI80P04P4L08AKSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 40V 80A TO262-3
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Meet the IPI80P04P4L08AKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPI80P04P4L08AKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.2mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
- Vgs (Max): +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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