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IPL60R125P7AUMA1

Infineon Technologies
IPL60R125P7AUMA1 Preview
Infineon Technologies
MOSFET N-CH 650V 27A 4VSON
$4.69
Available to order
Reference Price (USD)
3,000+
$2.13174
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 125mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 410µA
  • Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
  • FET Feature: -
  • Power Dissipation (Max): 111W (Tc)
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-VSON-4
  • Package / Case: 4-PowerTSFN

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