IPW65R037C6FKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 83.2A TO247-3
$21.99
Available to order
Reference Price (USD)
1+
$17.88000
30+
$15.24300
120+
$14.11267
510+
$12.22867
Exquisite packaging
Discount
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Meet the IPW65R037C6FKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPW65R037C6FKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 83.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 37mOhm @ 33.1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 3.3mA
- Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7240 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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