IPN50R1K4CEATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 500V 4.8A SOT223
$0.72
Available to order
Reference Price (USD)
3,000+
$0.19310
6,000+
$0.18189
15,000+
$0.17068
30,000+
$0.16284
Exquisite packaging
Discount
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The IPN50R1K4CEATMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPN50R1K4CEATMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 13V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
- Vgs(th) (Max) @ Id: 3.5V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 5W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-3
- Package / Case: TO-261-4, TO-261AA
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