IPP040N06NF2SAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH
$1.41
Available to order
Reference Price (USD)
1+
$1.41000
500+
$1.3959
1000+
$1.3818
1500+
$1.3677
2000+
$1.3536
2500+
$1.3395
Exquisite packaging
Discount
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Enhance your electronic projects with the IPP040N06NF2SAKMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPP040N06NF2SAKMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3375 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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