IPP126N10N3GXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 58A TO220-3
$1.80
Available to order
Reference Price (USD)
1+
$1.54000
10+
$1.36400
100+
$1.07800
500+
$0.83600
1,000+
$0.66000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IPP126N10N3GXKSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPP126N10N3GXKSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 12.3mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 46µA
- Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IRF6645TRPBF
onsemi
FDFMA2P029Z
Alpha & Omega Semiconductor Inc.
AOT7S65L
IXYS
IXFT96N20P
Infineon Technologies
IPU50R950CEAKMA1
Toshiba Semiconductor and Storage
TK7A60W,S4VX
IXYS
IXTK140N30P
Rectron USA
RM15N650TI
Vishay Siliconix
SI9407BDY-T1-GE3
onsemi