RM15N650TI
Rectron USA
Rectron USA
MOSFET N-CHANNEL 650V 15A TO220F
$0.92
Available to order
Reference Price (USD)
1+
$0.92000
500+
$0.9108
1000+
$0.9016
1500+
$0.8924
2000+
$0.8832
2500+
$0.874
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the RM15N650TI by Rectron USA, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The RM15N650TI stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Rectron USA.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 33.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
Related Products
Vishay Siliconix
SI9407BDY-T1-GE3
onsemi
NVTFS6H880NTAG
Vishay Siliconix
SI1469DH-T1-GE3
IXYS
IXFH100N30X3
Infineon Technologies
IPS70R900P7SAKMA1
onsemi
FDC30N20DZ
Microchip Technology
APT5010B2VRG
Texas Instruments
CSD17309Q3
IXYS
IXFP72N30X3
STMicroelectronics