IPP60R120P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 26A TO220-3
$4.76
Available to order
Reference Price (USD)
1+
$4.28000
10+
$3.84700
100+
$3.19900
500+
$2.63774
1,000+
$2.26354
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the IPP60R120P7XKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPP60R120P7XKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 410µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 95W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
AUIRFS8409
Infineon Technologies
IPAN70R600P7SXKSA1
onsemi
NTA4153NT1G
Vishay Siliconix
SQJQ404E-T1_GE3
Panjit International Inc.
PJD12P06-AU_L2_000A1
Infineon Technologies
IPT012N08N5ATMA1
STMicroelectronics
STD4N62K3
Alpha & Omega Semiconductor Inc.
AON7408
STMicroelectronics
STF7NM60N
onsemi