IPP65R310CFDAAKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 11.4A TO220-3
$2.05
Available to order
Reference Price (USD)
500+
$1.88168
Exquisite packaging
Discount
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Optimize your power electronics with the IPP65R310CFDAAKSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPP65R310CFDAAKSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 104.2W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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