PMXB350UPEZ
NXP Semiconductors
NXP Semiconductors
NEXPERIA PMXB350UPE - 20 V, P-CH
$0.06
Available to order
Reference Price (USD)
5,000+
$0.10325
10,000+
$0.09521
25,000+
$0.08985
50,000+
$0.08182
125,000+
$0.08036
Exquisite packaging
Discount
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The PMXB350UPEZ by NXP Semiconductors is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the PMXB350UPEZ is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 447mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 116 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 5.68W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1010D-3
- Package / Case: 3-XDFN Exposed Pad
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