IPP65R310CFDXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 11.4A TO220-3
$3.18
Available to order
Reference Price (USD)
1+
$2.73000
10+
$2.46800
100+
$1.98320
500+
$1.54250
1,000+
$1.27807
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IPP65R310CFDXKSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPP65R310CFDXKSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 440µA
- Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 104.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
Related Products
Renesas Electronics America Inc
RJK1052DPB-00#J5
Vishay Siliconix
SUP50020EL-GE3
NXP USA Inc.
PMDPB760EN115
Renesas Electronics America Inc
UPA1717G(0)-E1-AT
NTE Electronics, Inc
NTE2987
Vishay Siliconix
SQJ407EP-T1_GE3
Diotec Semiconductor
MMFTN170
Microchip Technology
APT12080JVFR
onsemi
NTMFS5C430NT3G
Toshiba Semiconductor and Storage