NTE2987
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET N-CH 100V 20A TO220
$4.65
Available to order
Reference Price (USD)
1+
$4.65000
500+
$4.6035
1000+
$4.557
1500+
$4.5105
2000+
$4.464
2500+
$4.4175
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE2987 from NTE Electronics, Inc sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to NTE Electronics, Inc's NTE2987 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
- FET Feature: Logic Level Gate, 4V Drive
- Power Dissipation (Max): 105W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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