IPS075N03LGAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 50A TO251-3
$0.19
Available to order
Reference Price (USD)
1+
$0.19000
500+
$0.1881
1000+
$0.1862
1500+
$0.1843
2000+
$0.1824
2500+
$0.1805
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the IPS075N03LGAKMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPS075N03LGAKMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-11
- Package / Case: TO-251-3 Stub Leads, IPak
Related Products
Vishay Siliconix
SIS415DNT-T1-GE3
Panjit International Inc.
PJQ5466A_R2_00001
onsemi
NTP5D0N15MC
Infineon Technologies
SPB80N06S2-08
IXYS
IXTA3N110
Alpha & Omega Semiconductor Inc.
AOSP21321
Infineon Technologies
SPW47N60CFDFKSA1
Infineon Technologies
IPLK80R1K2P7ATMA1
Toshiba Semiconductor and Storage
SSM6G18NU,LF
Fairchild Semiconductor