IPS70R950CEAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 7.4A TO251
$0.93
Available to order
Reference Price (USD)
1+
$0.86000
10+
$0.75300
100+
$0.58090
500+
$0.43032
1,000+
$0.34426
Exquisite packaging
Discount
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The IPS70R950CEAKMA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPS70R950CEAKMA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
- FET Feature: Super Junction
- Power Dissipation (Max): 68W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-11
- Package / Case: TO-251-3 Stub Leads, IPak
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