IPSA70R1K4CEAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 5.4A TO251-3
$0.94
Available to order
Reference Price (USD)
1+
$0.72000
10+
$0.63300
100+
$0.48830
500+
$0.36168
1,000+
$0.28934
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the IPSA70R1K4CEAKMA1 single MOSFET from Infineon Technologies. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Infineon Technologies's IPSA70R1K4CEAKMA1 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Fairchild Semiconductor
FQPF33N10L
onsemi
2SK4101FS
Infineon Technologies
IPS80R600P7AKMA1
STMicroelectronics
STP130N8F7
Fairchild Semiconductor
FQA38N30
STMicroelectronics
STB6NK90ZT4
IXYS
IXTH52P10P
Nexperia USA Inc.
BUK7D25-40EX
Renesas Electronics America Inc
NP100N04PUK-E1-AY
Diodes Incorporated