IPSA70R950CEAKMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 700V 8.7A TO251-3
$0.29
Available to order
Reference Price (USD)
1+
$0.86000
10+
$0.75300
100+
$0.58090
500+
$0.43032
1,000+
$0.34426
Exquisite packaging
Discount
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Discover the IPSA70R950CEAKMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPSA70R950CEAKMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3-347
- Package / Case: TO-251-3 Stub Leads, IPak
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