IPT063N15N5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-HSOF-8
$6.64
Available to order
Reference Price (USD)
1+
$6.64000
500+
$6.5736
1000+
$6.5072
1500+
$6.4408
2000+
$6.3744
2500+
$6.308
Exquisite packaging
Discount
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Upgrade your designs with the IPT063N15N5ATMA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPT063N15N5ATMA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 153µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8
- Package / Case: 8-PowerSFN
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