IPT60R055CFD7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 44A 8HSOF
$11.01
Available to order
Reference Price (USD)
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$11.01000
500+
$10.8999
1000+
$10.7898
1500+
$10.6797
2000+
$10.5696
2500+
$10.4595
Exquisite packaging
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Optimize your power electronics with the IPT60R055CFD7XTMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPT60R055CFD7XTMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 15.1A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 760µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2721 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 236W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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