IPT60R090CFD7XTMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 28A 8HSOF
$7.93
Available to order
Reference Price (USD)
1+
$7.93000
500+
$7.8507
1000+
$7.7714
1500+
$7.6921
2000+
$7.6128
2500+
$7.5335
Exquisite packaging
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The IPT60R090CFD7XTMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 9.3A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 470µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1752 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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