IPT65R060CFD7XTMA1
Infineon Technologies
Infineon Technologies
HIGH POWER_NEW
$6.96
Available to order
Reference Price (USD)
1+
$6.95860
500+
$6.889014
1000+
$6.819428
1500+
$6.749842
2000+
$6.680256
2500+
$6.61067
Exquisite packaging
Discount
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The IPT65R060CFD7XTMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-3
- Package / Case: 8-PowerSFN
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