IPTG007N06NM5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-HSOG-8
$7.78
Available to order
Reference Price (USD)
1+
$7.78000
500+
$7.7022
1000+
$7.6244
1500+
$7.5466
2000+
$7.4688
2500+
$7.391
Exquisite packaging
Discount
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Optimize your power electronics with the IPTG007N06NM5ATMA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPTG007N06NM5ATMA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 454A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 280µA
- Gate Charge (Qg) (Max) @ Vgs: 261 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 21000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSMD, Gull Wing
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