IPTG025N08NM5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH 40<-<100V PG-HSOG-8
$2.81
Available to order
Reference Price (USD)
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$2.80800
500+
$2.77992
1000+
$2.75184
1500+
$2.72376
2000+
$2.69568
2500+
$2.6676
Exquisite packaging
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Discover the IPTG025N08NM5ATMA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPTG025N08NM5ATMA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 184A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
- Vgs(th) (Max) @ Id: 3.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSFN
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