IPTG025N10NM5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-HSOG-8
$3.34
Available to order
Reference Price (USD)
1+
$3.33600
500+
$3.30264
1000+
$3.26928
1500+
$3.23592
2000+
$3.20256
2500+
$3.1692
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IPTG025N10NM5ATMA1 by Infineon Technologies is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Infineon Technologies for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 206A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 150A 10V
- Vgs(th) (Max) @ Id: 3.8V @ 158µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOG-8-1
- Package / Case: 8-PowerSFN
Related Products
IXYS
IXTP120N20X4
onsemi
FCPF600N60ZL1-F154
Renesas Electronics America Inc
2SK3230B-T1-A
Renesas Electronics America Inc
2SK1583-AZ
Fairchild Semiconductor
FDMS8660AS
Harris Corporation
RFP50N05
Diodes Incorporated
DMT67M8LCG-7
Vishay Siliconix
IRLR110TRPBF-BE3
IXYS
IXTQ3N150M
Diodes Incorporated