IXTQ3N150M
IXYS
IXYS
MOSFET N-CH 1500V 1.83A TO3PFP
$7.53
Available to order
Reference Price (USD)
1+
$7.53067
500+
$7.4553633
1000+
$7.3800566
1500+
$7.3047499
2000+
$7.2294432
2500+
$7.1541365
Exquisite packaging
Discount
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Enhance your electronic projects with the IXTQ3N150M single MOSFET from IXYS. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust IXYS's IXTQ3N150M for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1500 V
- Current - Continuous Drain (Id) @ 25°C: 1.83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.3Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 73W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PFP
- Package / Case: TO-3P-3 Full Pack
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