Shopping cart

Subtotal: $0.00

IPU05N03LA

Infineon Technologies
IPU05N03LA Preview
Infineon Technologies
MOSFET N-CH 25V 50A TO251-3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3110 pF @ 15 V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: P-TO251-3-1
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Related Products

Vishay Siliconix

SI3454ADV-T1-E3

Infineon Technologies

SPD30P06P

Vishay Siliconix

SI7774DP-T1-GE3

Toshiba Semiconductor and Storage

TK20S04K3L(T6L1,NQ

Diodes Incorporated

DMG2302UQ-7

Vishay Siliconix

SI4833ADY-T1-E3

Renesas Electronics America Inc

2SK3943-ZP-E1-AY

Top