IPW60R099CPFKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 31A TO247-3
$11.75
Available to order
Reference Price (USD)
1+
$9.49000
10+
$8.61000
240+
$7.18829
720+
$6.12218
1,200+
$5.41143
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the IPW60R099CPFKSA1 single MOSFET from Infineon Technologies. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the IPW60R099CPFKSA1 combines cutting-edge technology with Infineon Technologies's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 99mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 255W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-1
- Package / Case: TO-247-3
Related Products
Vishay Siliconix
SI7414DN-T1-E3
Texas Instruments
CSD25481F4
Microchip Technology
APT10045B2FLLG
Infineon Technologies
IPB120N03S4L03ATMA1
Nexperia USA Inc.
PSMN016-100PS,127
IXYS
IXTA86N20T-TRL
Fairchild Semiconductor
FDN372S
IXYS
IXTR170P10P
Fairchild Semiconductor
FQB16N15TM
Vishay Siliconix