IPW65R060CFD7XKSA1
Infineon Technologies
Infineon Technologies
650V FET COOLMOS TO247
$10.54
Available to order
Reference Price (USD)
1+
$10.54000
500+
$10.4346
1000+
$10.3292
1500+
$10.2238
2000+
$10.1184
2500+
$10.013
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Discover the IPW65R060CFD7XKSA1 from Infineon Technologies, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the IPW65R060CFD7XKSA1 ensures reliable performance in demanding environments. Upgrade your circuit designs with Infineon Technologies's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 860µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 171W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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