IPW80R280P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 800V 17A TO247-3
$4.80
Available to order
Reference Price (USD)
1+
$3.88000
10+
$3.48200
240+
$2.89558
720+
$2.38754
1,200+
$2.04884
Exquisite packaging
Discount
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Meet the IPW80R280P7XKSA1 by Infineon Technologies, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The IPW80R280P7XKSA1 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Infineon Technologies.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 360µA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
- FET Feature: Super Junction
- Power Dissipation (Max): 101W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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