SIDR140DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
N-CHANNEL 25-V (D-S) MOSFET
$2.82
Available to order
Reference Price (USD)
1+
$2.82000
500+
$2.7918
1000+
$2.7636
1500+
$2.7354
2000+
$2.7072
2500+
$2.679
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the SIDR140DP-T1-RE3 single MOSFET from Vishay Siliconix. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SIDR140DP-T1-RE3 combines cutting-edge technology with Vishay Siliconix's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 79A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.67mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 8150 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8DC
- Package / Case: PowerPAK® SO-8
Related Products
Toshiba Semiconductor and Storage
SSM6J424TU,LF
Nexperia USA Inc.
BUK9M19-60EX
Vishay Siliconix
SIR426DP-T1-GE3
Vishay Siliconix
SI4626ADY-T1-GE3
Vishay Siliconix
SISS50DN-T1-GE3
Vishay Siliconix
SI2309CDS-T1-BE3
Toshiba Semiconductor and Storage
SSM3J145TU,LF
Infineon Technologies
IRLH6224TRPBF
NXP USA Inc.
PMN49EN,135
onsemi