IPZ60R037P7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 76A TO247-4
$5.25
Available to order
Reference Price (USD)
1+
$5.25000
500+
$5.1975
1000+
$5.145
1500+
$5.0925
2000+
$5.04
2500+
$4.9875
Exquisite packaging
Discount
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Upgrade your designs with the IPZ60R037P7XKSA1 by Infineon Technologies, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the IPZ60R037P7XKSA1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 37mOhm @ 29.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.48mA
- Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5243 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 255W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4
- Package / Case: TO-247-4
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