IPZA65R029CFD7XKSA1
Infineon Technologies
Infineon Technologies
650V FET COOLMOS TO247
$17.65
Available to order
Reference Price (USD)
1+
$17.65000
500+
$17.4735
1000+
$17.297
1500+
$17.1205
2000+
$16.944
2500+
$16.7675
Exquisite packaging
Discount
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The IPZA65R029CFD7XKSA1 by Infineon Technologies is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the IPZA65R029CFD7XKSA1 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
- Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 305W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-4-3
- Package / Case: TO-247-4
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