IQE006NE2LM5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 25V 41A/298A 8TSON
$2.92
Available to order
Reference Price (USD)
1+
$2.92000
500+
$2.8908
1000+
$2.8616
1500+
$2.8324
2000+
$2.8032
2500+
$2.774
Exquisite packaging
Discount
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The IQE006NE2LM5ATMA1 single MOSFET from Infineon Technologies is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the IQE006NE2LM5ATMA1 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 298A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 650mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 82.1 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 5453 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSON-8-4
- Package / Case: 8-PowerTDFN
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